Dr. Md. Shafiqul Islam

Dr. Md. Shafiqul Islam

Professor
Contact Information
Major Area

Electronics and Photonics (EP)

Education

Ph.D., Dublin City University, Dublin, Ireland

Research Interests
  • Electronic Devices-Materials and Processing
  • Fabrication and Characterization of Compound Semiconductor devices
  • Nanotechnology
  • Renewable Energy Systems (Photovoltaics)
  • VLSI Circuits and Systems
  • Fabrication and Characterization of Photonic Devices such as SHG-Modulators
  • Using Ferroelectric Material (Lithium Niobate)
Dr. Md. Shafiqul Islam
Education

  • Ph D (Electronic Engineering)( Specialization: Microelectronics), Dublin City University, Dublin, Ireland, 1997.

  • M. Sc (Electrical & Electronic Eng), Bangladesh Univ of Eng & Tech, Dhaka, Bangladesh, 1989.

  • B. Sc (Electrical & Electronic Eng), Bangladesh Univ of Eng & Tech, Dhaka, Bangladesh, 1987.

  • H.S.C (Science Group), Rangpur Cadet College, Rangpur, Bangladesh, 1981.

Employments [Home]:

  • Professor & Dean, Faculty of Electrical and Electronic Eng. (EEE), BUET, Dhaka. (Sep 2023 to Sep 2025)

  • Professor, Department of Electrical and Electronic Eng. (EEE), BUET, Dhaka. (Jul 2020 to Sep 2023)

  • Professor & Head, Dept of EEE, BUET, Dhaka. (Jun 2018 to Jun 2020)

  • Professor, Dept of EEE, BUET, Dhaka. (Sep 2012 to Jun 2018)

  • Professor & Head, Dept of EEE, Uttara University(On leave from BUET), Dhaka. (Sep 2011 to Aug 2012)

  • Professor, Dept of EEE, BUET, Dhaka. (Jul 2005 to Aug 2011)

  • Associate Professor, Dept of EEE, BUET, Dhaka. (Feb 1999 to Jun 2003)

  • Assistant Professor, Dept of EEE, BUET, Dhaka. (Jan 1992 to Feb 1999)

  • Lecturer, Dept of EEE, BUET, Dhaka. (Jul 1989 to Jan 1992)

Employments [Abroad](On leave from BUET):

  • Visiting Professor, Shizuoka University, Japan. (Apr 2005 to Jun 2005)

  • Associate Professor, Shizuoka University, Japan. (Jun 2003 to Mar 2005)

Membership in Professional Societies and Organizations:

  • Fellow, Institution of Engineers Bangladesh (IEB)

  • Senior Member, Institute of Electrical and Electronics Engineers (IEEE), USA

  • Member, IEEE Electron Devices Society (EDS)

  • Former Chair, IEEE Joint Electron Devices Society (EDS) and Solid State Circuits Society (SSCS) Chapter, Bangladesh Section (2019  2021)

List of Publications:

Journals

  1. S. R. Arnab, J. Haldar and M. S. Islam, "MoSe2 and Al-Doped MoSe2 as Targeted Carriers for Anti-tuberculosis Drug Delivery with Controlled Release: A First-principles DFT Study," Inorganic Chemistry Communications, 174 (2025) 113979 http://doi.org/10.1016/j.inoche.2025.113979.
  2. S. R. Arnab, J. Haldar and M. S. Islam, Detecting Decomposition Gases with Ni-doped MoS2 : A First-principles DFT Calculation,” Chemical Physics 593 (2025) 112621 https://doi.org/10.1016/j.chemphys.2025.112621.
  3. R. Fabiha, C. N. Saha and M. S. Islam, “Analytical Modeling and Performance Analysis for Symmetric Double Gate Stack-Oxide Junctionless FET in Subthreshold Region,” Int’l J. Systems Applications, Engineering and Development, Vol.11, 2017, pp.138-142.
  4. S. I. Ali, M. S. Islam, and M. R. Islam, “A Comprehensive Review of Energy Efficient Content Addressable Memory for Network Applications,” Journal of Circuits, Systems and Computers, Vol. 25, No. 4, 2016 DOI: 10.1142/S0218126616300026.
  5. S. I. Ali and M. S. Islam, “Improved Charge-Shared Match-Line Sensing Scheme for Dynamic Energy Reduction in TCAM,” IETE Journal of Research, Febuary 2015 DOI: 10.1080/03772063.2015.1018847.
  6. S. I. Ali and M. S. Islam, “A Match-Line Dynamic Energy Reduction Technique for High-Speed Ternary CAM Using Dual Feedback Sense Amplifier,” Journal of Microelectronics, Vol. 45, Issue 1.2014, pp. 95–101, ELSEVIER http://dx.doi.org/10.1016/j.mejo.2013.10.006
  7. S. I. Ali and M. S. Islam, “An Energy Efficient Design of High-Speed Ternary CAM Using Match-Line Segmentation and Resistive Feedback in Sense Amplifier,” Journal of Computers, Vol.7, No. 3, 2012, pp.567-577.
  8. S. I. Ali and M. S. Islam, “A High-Speed and Low-Energy Ternary Content Addressable Memory Design using Feedback in Match-Line Sense Amplifier,” Int’l J. Electrical and Computer Engineering, Vol.6, No. 1, 2010, pp.28-36.
  9. M. Minakata, M. S. Islam, S. Nagano, S. Yoneyama, T. Sugiyama and H. Awano, "Very-Deep Nanometer-Size Domain Inversion in LiNbO3: Proposal for Circular Form Full Cover Electrodes," Jpn. J. Appl. Phys. Vol.66, No.7A, 2007, pp.4138-4143.
  10. M. Minakata, M. S. Islam, S. Nagano, S. Yoneyama, T. Sugiyama and H. Awano, "Nanometer Size Periodic Domain Inversion in LiNbO3 Substrate Using Circular Form Full Cover Electrodes," Solid-State Electron., Vol.50, 2006, pp. 848-852.
  11. M. S. Islam and M. M. Zaman, "A Seven-Parameter Nonlinear I-V Characteristics Model for Sub-µm Range GaAs MESFETs," Solid-State Electron., Vol.48, 2004, pp. 1111-1117.
  12. M. S. Islam, M. Q. Huda, A. H. M. Zahirul Alam and P. J. McNally, "Performances of Novel Pd/Sn and Pd/Sn/Au Ohmic Metallizations to n-GaAs," Microelectron. Eng., Vol. 60, Issue 3-4, 2002, pp. 457-467.
  13. M. S. Islam and P. J. McNally, "Novel Non-alloyed Thermally Stable Pd/Sn and Pd/Sn/Au Ohmic Contacts for the Fabrication of GaAs MESFET's," IEEE Trans. Electron. Dev., Vol. 48, No. 4, 2001, pp. 823-825.
  14. M. Q. Huda, S. A. Siddiqui and M. S. Islam, "Explaining the Erbium Luminescence Profile in Silicon Under Short Excitation Pulses," Solid-State Comm., Vol. 118, 2001, pp. 235-239.
  15. M. S. Islam, P. J. McNally, A. H. M. Zahirul Alam and M. Q. Huda, "Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic Contacts for GaAs MESFET's: Technology and Performance," Solid-State Electron., Vol. 44, 2000, pp. 655-661.
  16. M. S. Islam, "Recent Advances in Ni-Based Ohmic Contacts to n-GaAs," J. Elect. Eng., Vol. 27, No. 1, 1999, pp. 43-55.
  17. M. S. Islam, "Characterization of GaAs MESFET's with Novel Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic Contacts," J. Elect. Eng., Vol.27, No. 2, 1999, pp. 31-34.
  18. M. S. Islam and P. J. McNally, "Thermally Stable Pd/Sn and Pd/Sn/Au Ohmic Contacts to n-type GaAs," Thin Solid Films, Vol.320, 1998, pp.253-259.
  19. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Properties of Pd/Sn Ohmic Contacts on n-GaAs," J. Materials Processing Technol., Vol. 77, 1998, pp.42-49.
  20. M. S. Islam and M. Q. Huda, "GaAs MESFETs Fabricated with Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic Contacts," J. Elect. Eng., Vol. 26, No. I & II, 1998, pp. 5-7.
  21. M. S. Islam and P. J. McNally, "A Comparison Study of Pd/Sn/Au, Au/Ge/Au/Ni/Au, Au-Ge/Ni and Ni/Au-Ge/Ni Ohmic Contacts to n-GaAs," Microelectron. Eng., Vol. 40, 1998, pp.35-42.
  22. M. S. Islam and P. J. McNally, "Effects of Metallization Thickness on the Thermal and Long-Term Stability of Pd/Sn Ohmic Contacts to n-GaAs," Phys. Stat. Sol. (a), Vol. 165, 1998, pp.417-426.
  23. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "The Importance of the Pd to Sn Ratio and Annealing Cycles on the Performance of Pd/Sn Ohmic Contacts to n-GaAs," Thin Solid Films, Vol. 292, 1997, pp. 264-269.
  24. M. S. Islam, P. J. McNally and D. C. Cameron, "Thermal Stability of the Non-alloyed Pd/Sn and Pd/Ge Ohmic Contacts to n-GaAs," Thin Solid Films, Vol. 308-309, 1997, pp.607-610.
  25. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Effects of Au Overlayers on the Electrical and Morphological Characteristics of Pd/Sn Ohmic Contacts to n-GaAs," Thin Solid Film, Vol. 290-291, 1996, pp. 417-421.
  26. S. I. Khan and M. S. Islam, "Analysis of a Balanced Output Converter," J. Elect. Eng., Vol.19, 1991, pp.9-14.

Conferences/Workshops/Symposiums

  1. A. A. Hasib, K. S. Ahmed and M. S. Islam, “Design and Characterization of High-Performance Heterojunction Vertical TFET-Based Biosensors With Trench Gate Structure for Higher Sensitivity,” Proc. 6th Int’l Conf. on Devices for Integrated Circuit (DevIC 2025), April 5-6, 2025, Kalyani, India, pp.560-565, IEEE Xplore DOI: 10.1109/DevIC63749.2025.11012608.
  2. Z. J. Nikita, M. T. Alam, F. Bushra and M. S. Islam, “A Comparative Analysis Between Ga-MoS2 and Al-MoS2 as Gas Sensors for Sensing SF6 Decomposition Gases,” Proc. 13th Int’l Conf. on Electrical and Computer Engineering (ICECE 2024), Dhaka, Bangladesh, December 18-20, 2024, pp. 44-45.
  3. D. M. I. Anik and M. S. Islam, “Absorption Properties of Ni-doped TiO2 Towards Dissolved Gases in Transformer Oil: A DFT Study,” Proc. 13th Int’l Conf. on Electrical and Computer Engineering (ICECE 2024), Dhaka, Bangladesh, December 18-20, 2024, pp. 68-69.
  4. S. R. Arnab, J. Haldar and M. S. Islam, “A Comparison Between Ga-MoS2 and Al-MoSe2 for Detecting Volatile Organic Compounds for Lung Cancer Detection.” Proc. 6th Int’l Conf. on Electrical Engineering and Information Communication Technology (ICEEICT), Military Institute of Science and Technology (MIST), Dhaka, Bangladesh, May 2024, pp. 61-66 (979-8-3503-8577-9/24/$31.00 ©2024 IEEE).
  5. M. S. Morshed and M. S. Islam, “Consistency of Peak Wavelength with Higher Absorption of GaN Nanowire Arrays : Independency on Filling Fraction,” Proc. 5th IEEE Int’l Conf. on Telecommunications and Photonics (ICTP 2023), Dhaka, Bangladesh, December 21-23, 2023, pp. 1-4, Paper ID 059 (979-8-3503-9347-7/23/$31.00 © 2023 IEEE).
  6. A. Imtiaz, F. Montasir and M. S. Islam, “Analysis of Highly Efficient Hybrid Perovskite Solar Cell,” Proc. Energy Conference 2023 (ENCON 2023), BUET, Dhaka, Bangladesh, December 14-15, 2023, pp. 56-60.
  7. S. M. Sujan, K. M. K. I. Zakir, M. F. Islam and M. S. Islam, “Prospect of Solar Thermal Power Plant in Bangladesh,” Proc. Energy Conference 2023 (ENCON 2023), BUET, Dhaka, Bangladesh, December 14-15, 2023, pp. 69-73.
  8. M. S. Morshed, K. K. Bhowmik and M. S. Islam, “Investigation of MoS2/Perovskite/WSe2 on Si Tandem Structure of Solar Cell,” Proc. 12th Int’l Conf. on Electrical and Computer Engineering (ICECE 2022), Dhaka, Bangladesh.
  9. A. Ghosh, S. Safat and M. S. Islam, “Numerical Analysis of Light Absorption in Tapered Nanowire Based Perovksite Solar Cell”, Proc. 11th Int’l Conf. on Electrical and Computer Engineering (ICECE 2020), Dhaka, Bangladesh, December 17-19, 2020, pp. 5-8.
  10. M. S. Islam, S. Islam, H. Ahmed and A. Ahad, “Investigation and Mathematical Modelling for Different Scattering Mechanisms in AlGaN/GaN HEMT,” Proc. of the 4th World Congress on Recent Advances in Nanotechnology (RAN'19), Rome, Italy, April 14-16, 2019, pp. 1-10 (Paper No. ICNNFC 102, DOI: TBA).
  11. A. Ghosh, S. Safat and M. S. Islam, “Stable and Efficient Perovskite Solar Cell with Metal Oxide Transport Layers,” Proc. Int’l Conf. on Electrical, Computer and Communication Engineering (ECCE2019), Cox’s Bazar, Bangladesh, February 7-9, 2019: pp. 1-5, IEEE Xplore DOI: 10.1109/ECACE.2019.8679418.
  12. M. S. Islam, A. Ahad, H. Ahmed, and S. Islam, “Comparative Study Between AlGaN/GaN and AlInN/GaN High Electron Mobility Transistors,” Proc. 10th Int’l Conf. on Electrical and Computer Engineering (ICECE 2018), Dhaka, Bangladesh, December 20-22, 2018: pp. 141-144, IEEE Xplore DOI: 10.1109/ICECE.2018.8636702.
  13. R. Fabiha, C. N. Saha and M. S. Islam, “Analytical Modeling and Performance Analysis for Symmetric Double Gate Stack-Oxide Junctionless Field Effect Transistor in Subthreshold Region,” Proc. 2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC), 21-23 December 2017, Dhaka, Bangladesh, pp.310-313 (in IEEE xPlore).
  14. C. N. Saha, R. Fabiha and M. S. Islam, “Effect of Dielectric Constant and Oxide Thickness on the Performance Analysis of Symmetric Double Gate Stack-Oxide Junctionless Field Effect Transistor in Subthreshold Region,” Proc. Int’l Conf. on Electrical Computer and Communication Engineering (ECCE 2017), Cox’s Bazar, Bangladesh, February 16-18, 2017, pp.140-144 (in IEEE xPlore).
  15. M. S. Islam, J. Afza, and S. Tarannum, “Modelling and Performance Analysis of Asymmetric Double Gate Stack-Oxide Junctionless FET in Subthreshold Region,” Proc. 2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC), 21-23 December 2017, Dhaka, Bangladesh, pp.538-541 (in IEEE xPlore).
  16. T. Roy, I. U. Zaman and M. S. Islam, “Novel FinFET Domino Logic Circuit Using Dual Keepers,” Proc. 1st Int’l Conf. on Electrical and Information & Communication Technology (ICEEICT 2014), Military Institute of Science and Technology (MIST), Dhaka, Bangladesh, April 10-14, 2014 IEEE Xplore DOI: 10.1109/ICEEICT.2014.6919057.
  17. M. S. Islam and S. I. Ali, “Improved Charge Shared Scheme for Low-Energy Match Line Sensing in Ternary Content Addressable Memory,” Proc.2014 IEEE Int’l Symposium on Circuits and Systems (ISCAS2014), Melbourne, Australia, June 1-5, 2014, Paper ID. 1081.
  18. I. Zaman, T. Roy and M. S. Islam, “Power, Delay and Area Optimization in a Full-Adder Circuit Using FinFETs,” Proc. Int’l Conf. on Electrical, Information and Communication Technology (ICEICT 2013), Khulna, Bangladesh, 19-21 December 2013.
  19. A. J. Chowdhury, M.S. Rizwan and M. S. Islam, “An Efficient VLSI Design Approach to Reduce Static Power Using Variable Body Biasing,” Proc. Int’l Conf. on Electrical, Computer, Electronics and Communication Engineering (ICECECE 2012), Venice, Italy, April 11-13, 2012, pp.263-267.
  20. S. I. Ali and M. S. Islam, “A Current Race-Based Technique with Dual Feedback for Match-Line Energy Reduction in Ternary Content Addressable Memory,” Proc. 7th Int. Conf. on Electrical and Computer Engineering (ICECE 2012), Dhaka, Bangladesh, December 20-22, 2012 IEEE Xplore DOI: 10.1109/ICECE.2012.6471653.
  21. T. Ahmed, A. T. Khan, and M. S. Islam, “Two Dimensional Analytical Potential Distribution Model for GaN MESFET,” Proc. Int’l Conf. on Devices Circuits and Systems” (ICDCS’12), March 15 - 16, 2012, Coimbatore, India, pp.252-255.
  22. T. Izma, P. Barua, M. R. Rahman, P. Sengupta and M.S. Islam, "Novel Approaches to Low Leakage and Area Efficient VLSI Design," Proc. Int’l Conf. on Informatics, Electronics and Vision (ICIEV2012), May 18-19, 2012, Dhaka, Bangladesh, pp. 316-319.
  23. S. I. Ali and M. S. Islam, “A Novel Low-Energy Match Line Sensing Scheme for Ternary Content Addressable Memory Using Charge Sharing,” Proc. 29th Norchip Conference, Lund, Sweden, November 14-15, 2011, pp.1-4.
  24. S. I. Ali and M. S. Islam, “A High-speed and Low-power Ternary CAM Design Using Match-line Segmentation and Feedback in Sense Amplifiers,” Proc. 13th Int. Conf. on Computer and Information Technology (ICCIT 2010), Dhaka, Bangladesh, December 23-25, 2010, pp.221-226.
  25. M. S. Islam, M. R. K. Akanda, S. Anwar and A. Shahriar, “Analysis of Resistances and Transconductance of SiC MESFET Considering Fabrication Parameters and Mobility as a Function of Temperature,” Proc. 6th Int. Conf. on Electrical and Computer Engineering (ICECE 2010), Dhaka, Bangladesh, pp. 5-8, 2010 DOI: 10.1109/ICELCE.2010.5700539.
  26. M. S. Islam and M. R. K. Akanda, “3D Temperature Distribution of SiC MESFET Using Green’s Function,” Proc. 6th Int. Conf. on Electrical and Computer Engineering (ICECE 2010), Dhaka, Bangladesh, December 18-20, 2010, pp. 13-16.
  27. M. S. Islam, M. S. Nasrin, N. Mansur and N. Tasneem, “Dual Stack Method: A Novel Approach to Low Leakage and Speed Power Product VLSI Design,” Proc. 6th Int. Conf. on Electrical and Computer Engineering (ICECE 2010), Dhaka, Bangladesh, December 18-20, 2010, pp. 89-92.
  28. S. I. Ali and M. S. Islam, “High-speed and Low-energy Ternary Content Addressable Memory Using Two-step Comparison and Feedback Sense Amplifier” Proc. 6th Int. Conf. on Electrical and Computer Engineering (ICECE 2010), Dhaka, Bangladesh, December 18-20, 2010, pp. 93-96.
  29. M. S. Islam, M. Islam, M. R. Hasan and S. M. N. Islam, "An Improved DC I-V Characteristics Model for SiC MESFETs Incorporating Self-heating Effect," Proc. 2009 IEEE Regional Symposium on Micro and Nano Electronics (RSM2009), Kota Bharu, Malaysia, August 10-12, 2009, pp. 204-208.
  30. N. Karmakar, M. Z. Sadi, M. K. Alam and M. S. Islam, "A Novel 10 Transistor Low-Power and High Speed Pass Transistor Based Full Adder Cell," Proc. 2009 IEEE Regional Symposium on Micro and Nano Electronics (RSM2009), Kota Bharu, Malaysia, August 10-12, 2009, pp. 405-408.
  31. N. Karmakar, M. Z. Sadi, M. K. Alam and M. S. Islam, "A Novel Dual Sleep Approach to Low Leakage and Area Efficient VLSI Design," Proc. 2009 IEEE Regional Symposium on Micro and Nano Electronics (RSM2009), Kota Bharu, Malaysia, August 10-12, 2009, pp. 409-414.
  32. M. S. Islam, M. Islam, M. R. Hasan and S. M. N. Islam, "An Improved Nonlinear DC I-V Characteristics Model for Nanometer Range GaAs MESFETs," The IEEE TENCON 2009, Singapore, November 23-26, 2009 (Digital Object Identifier: 10.1109/TENCON.2009.5395879), pp. 1 – 5.
  33. M. S. Islam and M. Minakata, "Very Deep Nanoscale Domain Inversion in LiNbO3 for High Power and High Efficiency SHG Devices," Proc. 5th Int. Conf. on Electrical and Computer Engineering (ICECE 2008), Dhaka, Bangladesh, December 20-22, 2008, pp. 555-560.
  34. M. Z. Sadi, N. Karmakar, M. K. Alam and M. S. Islam, "Comparative Analysis of Subthreshold Swing Models for Different Double Gate MOSFETs," Proc. 5th Int. Conf. on Electrical and Computer Engineering (ICECE 2008), Dhaka, Bangladesh, December 20-22, 2008, pp. 152-157.
  35. R. R. Hossain, M. K. Chowdhury, E. M. Shujon and M. S. Islam, "Optical Directional Coupler Switch Using Domain Inversion Technology," Proc. 5th Int. Conf. on Electrical and Computer Engineering (ICECE 2008), Dhaka, Bangladesh, December 20-22, 2008, pp. 113-116.
  36. M. S. Islam, M. Minakata, S. Nagano, S. Yoneyama, T. Sugiyama and H. Awano, "Fabrication of Very-Deep Nanometer-Size Domain Inversion in LiNbO3 by Circular Form FCE," 4th Int. Conf. on Electrical and Computer Engineering (ICECE 2006), Dhaka, Bangladesh, December 19-21, 2006, pp. 257-261.
  37. T.A. Amin, C.M. Arif, A.T. Rasin, S.M. Mominuzzaman and M. S. Islam, "Spectral Photoresponse of Nitrogen Incorporated Carbon Thin Films," Proc. 4th Int. Conf. on Electrical and Computer Engineering (ICECE 2006), Dhaka, Bangladesh, December 19-21, 2006, pp. 374-377.
  38. M. S. Islam, S. Nagano, S. Yoneyama, T. Sugiyama, H. Awano and M. Minakata, "Fabrication of Nanometer Size Periodic Domain Inversion in LiNbO3 Using Circular Form FCE Method," Proc. 4th Int'l Conf. on Global Research and Education: Inter-academia 2005, Wuppertal, Germany, Sept. 19-22, 2005, pp. 1-9.
  39. M. S. Islam, S. Nagano, S. Yoneyama, and M. Minakata, "Formation of Small Size Domain Inversion Using Circular Form FCE Method," Optics Japan 2004, Osaka University, Japan, 4pD6, 2004, pp.76-77.
  40. S. Nagano, M. S. Islam, S. Yoneyama and M. Minakata, "Formation of Small Size Domain Inversion Using Circular Form FCE Method," Proc. 8th Joint Int'l Conf. on Advanced Science & Technology (JICAST2004), Zhejiang University, Hangzhou, China, December 24-25, 2004, pp. 59-62.
  41. S. Yoneyama, M. S. Islam, K. Suzuki, H. Awano, and M. Minakata, "Bio-conjugate Photosensitive FET Using Photosystem I," Ext. Abst. The 52nd Spring Meeting, The Japan Soc. Appl. Phys., Saitama University, Japan, March 29- April 1, 2004, YY6, p.115.
  42. M. Zaman and M. S. Islam, "Modeling of Nonlinear I-V Characteristics for Submicron GaAs MESFETs," Proc. 2nd Int. Conf. on Electrical and Computer Engineering (ICECE 2002), Dhaka, Bangladesh, December 26-28, 2002, pp.304-307.
  43. M. S. Islam, M. Rahman, M. M. Hasan, M. N. Islam, K. Arifuzzaman, M. Q. Huda and A. H. M. Zahirul Alam, "Analytical Modeling of Deep-Sub-Micron Thin-Film Fully-Depleted Cylindrical Gate MOSFET," Proc. 9th Int. Symp. on Integrated Circuits, Devices & Systems (ISIC-2001), Singapore, 3-5 September 2001, pp. 386-389.
  44. M. S. Islam, M. Rahman, Q. A. Iqbal, M. K. Husain and M. Q. Huda, "Analytical Modelling of Threshold Voltage Shift in Short Channel Fully Depleted Cylindrical Gate MOSFET," Proc. IEEE Int. Conf. on Electrical & Computer Eng. (ICECE 2001), 5-6 January 2001, Dhaka, Bangladesh, pp. 179-182.
  45. M. Q. Huda and M. S. Islam, "Mathematical Modeling for Erbium Luminescence in Silicon," Proc. IEEE Int. Conf. on Electrical and Computer Eng. (ICECE 2001), 5-6 January 2001, Dhaka, Bangladesh, pp. 44-45.
  46. A. H. M. Zahirul Alam, M. F. Momen, M. S. Islam and P. K. Saha, "Analytical Model for Subthreshold Current in Short-channel Fully-depleted SOI MOSFETs Incorporating Velocity Overshoot," Design, Modeling and Simulation in Microelectronics, 28-30 November 2000, Singapore, Proc. of SPIE, Vol. 4228, pp. 259-269.
  47. M. S. Islam, M. Rahman, Q. A. Iqbal, M. T. Khan and M. K. Husain, "Double-Gate SOI MOSFET's - Trends in Scaling Theory," Proc. Int. Conf. on Manufacturing (ICM2000), Dhaka, Bangladesh, 24-26 February 2000, pp. 529-542.
  48. M. Q. Huda and M. S. Islam, "The 1.54 Micrometer Erbium Luminescence in Silicon-Germanium," Int'l Symposium on Microelectronics and Applications (ISMA'2000), 28-30 November 2000, Singapore, Proc. of SPIE, Vol. 4227, pp. 44-47.
  49. M. S. Islam and P. J. McNally, "SIMS Analysis of Non-alloyed Pd/Sn, Pd/Sn/Au and Alloyed Au/Ge/Au/Ni/Au Ohmic Contacts to n-GaAs," Proc. Int. Conf. on Manufacturing (ICM2000), Dhaka, Bangladesh, 24-26 February 2000, pp. 497-504.
  50. M. S. Islam, P. J. McNally, M. Q. Huda and A. H. M. Zahirul Alam, "A Comparative Study of Non-alloyed Pd-based and Alloyed Ni-based Ohmic Contacts to n-GaAs," Proc. Int. Conf. on Manufacturing (ICM2000), Dhaka, Bangladesh, 24-26 February 2000, pp. 505-512.
  51. M. Q. Huda, A. R. Peaker and M. S. Islam, "The Role of Annealing Temperature on Optical Activation of Erbium Atoms in Ion Implanted Structures," Proc. Int. Conf. on Manufacturing (ICM2000), Dhaka, Bangladesh, 24-26 February 2000, pp. 489-496.
  52. M. S. Islam, A. H. M. Zahirul Alam and M. Q. Huda, "Measurement of Semiconductor Energy Gap Using Absorption Spectrum," Proc. of the 10th Int. Workshop on the Physics of Semiconductor Devices (IWPSD99), IIT Delhi, India, 14-18 December 1999, pp. 234-238.
  53. M. S. Islam, A. H. M. Zahirul Alam and M. Q. Huda, "Advantages and Problems of Thermal Evaporation and Conventional Annealing of Metallizations for the Fabrication of GaAs MESFET's," Proc. of the 10th Int. Workshop on the Physics of Semiconductor Devices (IWPSD99), IIT Delhi, India, 14-18 December 1999, pp. 588-593.
  54. M. Q. Huda, S. A. Siddique, M. N. Islam and M. S. Islam, "The Mechanism for Erbium Luminescence in Silicon at 1.54 Micrometer," in Photonics and Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, S. T. Ho, Y. Zhou, W. W. Chow and Y. Arakawa, Editors, Proc. of SPIE, Vol. 3899, 1999, pp. 330-334.
  55. M. Q. Huda and M. S. Islam, "Erbium Centers in Silicon and the Corresponding Luminescence," Proc. of the 10th Int. Workshop on the Physics of Semiconductor Devices (IWPSD99), IIT Delhi, India, 14-18 December 1999, pp. 387-390.
  56. M. Q. Huda and M. S. Islam, "X-Ray Analysis of Epitaxially Recrystallized Si/Si1-xGex/Si Structures," Proc. Int. Conf. on Material Science and Technology, BUET, Dhaka, Bangladesh, 23-27 October 1999, pp. 136-139.
  57. M. S. Islam, "Recent Developments in Ohmic Metallizations to p-type GaAs," Proc. Int. Conf. on Structure, Processing and Properties of Materials (SPPM'97), BUET, Dhaka, Bangladesh, 15-17 November 1997, pp. C82-C93.
  58. M. S. Islam, "Non-alloyed Pd/Sn/Au and Alloyed Au-Ge/Ni Ohmic Contacts to n-GaAs: A Comparative Study," Proc. Int. Conf. on Structure, Processing and Properties of Materials (SPPM'97), BUET, Dhaka, Bangladesh, 15-17 November 1997, pp. D11-D16.
  59. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Comparison of Pd/Sn and Pd/Sn/Au Thin-Film Systems for Device Metallization," Mater. Res. Soc. Symp. Proc., Vol. 427, 1996, pp. 583-589 (Mater. Res. Soc. (MRS) 1996 Spring Meeting, San Francisco, USA, 8-12 April 1996).
  60. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Ohmic Contacts to n-type GaAs Made with Pd/Sn and Pd/Sn/Au Metallizations," Proc. of the 8th Mediterranean Electrotechnical Conf. (melecon '96), Bari, Italy, 13-16 May 1996, pp. 385-388.
  61. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Effects of Annealing Cycles on the Electrical and Morphological Characteristics of Pd/Sn Ohmic Contacts to n-GaAs," Proc. of the 8th Mediterranean Electrotechnical Conf. (melecon '96), Bari, Italy, 13-16 May 1996, pp. 1294-1297.
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  63. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "A Novel Pd-Based Ohmic Contact System for n-type GaAs: A Structural, Morphological and Electrical Investigation," Proc. of the 6th European Conf. on Applications of Surface and Interface Analysis (ECASIA'95), Montreux, Switzerland, 9-13 October 1995, published by Wiley & Sons, pp.299-302.
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  65. S. I. Khan and M. S. Islam, "Analysis of a Single Phase Direct Frequency Changer for Input Unbalance Correction," Proc. of 1991 Int. Conf. on Industrial Electronics, Control and Instrumentation (IECON'91), Kobe, Japan, 28 Oct.-1 Nov. 1991, pp.216-221.

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