Course Title: Solid State Devices
Type of Course: Compulsory, Theory
Offered to: EEE
Pre-requisite Course(s): None
Semiconductors in equilibrium: Energy bands, intrinsic and extrinsic semiconductors, Fermi levels, electron and hole concentrations, temperature dependence of carrier concentrations and invariance of Fermi level.
Carrier transport processes and excess carriers: Drift and diffusion, generation and recombination of excess carriers, built-in-field, recombination-generation SRH formula, surface recombination, Einstein relations, continuity and diffusion equations for holes and electrons and quasi-Fermi level.
PN junction: Basic structure, equilibrium conditions, contact potential, equilibrium Fermi level, space charge, non-equilibrium condition, forward and reverse bias, carrier injection, minority and majority carrier currents, transient and AC conditions, time variation of stored charge, reverse recovery transient and capacitance.
Bipolar Junction Transistor: Basic principle of pnp and npn transistors, emitter efficiency, base transport factor and current gain, diffusion equation in the base, terminal currents, coupled-diode model and charge control analysis, Ebers-Moll model and circuit synthesis. BJT non-ideal effects; Hetero-junction transistors.
Metal-semiconductor junction: Energy band diagram of metal semiconductor junctions, rectifying and ohmic contacts.
MOS structure: MOS capacitor, energy band diagrams and flat band voltage, threshold voltage and control of threshold voltage, static CV characteristics, qualitative theory of MOSFET operation, body effect and current-voltage relationship of a MOSFET. Non-ideal characteristics of MOSFET: channel-length modulation and shortchannel effects in MOSFETs. MOS scaling
Introduction to Multigate FET architecture: Double gate MOSFET, FinFET, Surrounding gate FET, high-K dielectric FETs.
To provide a physics-based understanding of the operation principle of some of the most commonly used solid-state electronic devices, such as p-n junction diodes, metal-semiconductor devices, bipolar-junction transistors (BJTs), metal oxide semiconductor field effect transistors (MOSFETs) and capacitors.
To establish the theoretical foundation required for designing solid-state devices so that those can be applied for practical electronic applications
Fundamental understanding of concepts of Electronic Circuits I course and Electrical Properties of Materials courses
| CO No. | CO Statement | Corresponding PO(s)* | Domains and Taxonomy level(s)** | Delivery Method(s) and Activity(-ies) | Assessment Tool(s) |
|---|---|---|---|---|---|
| 1 | apply the physics-based knowledge to solve problems relevant the operation of solid-state devices | PO(a) | C3 | Lectures, Discussions | Assignment, Class test, Final exam |
| 2 | analyse the operation of solid-state devices based on the underlying physics | PO(b) | C4 | Lectures, Discussions | Assignment, Class test, Final exam |
| 3 | design solid-state electronic devices such that specified performance characteristics are attained | PO(c) | C6 | Lectures, Discussions | Assignment, Final exam |
Cognitive Domain Taxonomy Levels: C1 – Knowledge, C2 – Comprehension, C3 – Application, C4 – Analysis, C5 – Synthesis, C6 – Evaluation, Affective Domain Taxonomy Levels: A1: Receive; A2: Respond; A3: Value (demonstrate); A4: Organize; A5: Characterize; Psychomotor Domain Taxonomy Levels: P1: Perception; P2: Set; P3: Guided Response; P4: Mechanism; P5: Complex Overt Response; P6: Adaptation; P7: Organization
Program Outcomes (PO): PO(a) Engineering Knowledge, PO(b) Problem Analysis, PO(c) Design/development Solution, PO(d) Investigation,
PO(e) Modern tool usage, PO(f) The Engineer and Society, PO(g) Environment and sustainability, PO(h) Ethics, PO(i) Individual work and team work,
PO(j). Communication, PO(k) Project management and finance, PO(l) Life-long Learning
* For details of program outcome (PO) statements, please see the departmental website or course curriculum
| K1 | K2 | K3 | K4 | K5 | K6 | K7 | K8 | P1 | P2 | P3 | P4 | P5 | P6 | P7 | A1 | A2 | A3 | A4 | A5 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 🗸 | 🗸 | 🗸 | 🗸 | 🗸 | 🗸 | 🗸 | 🗸 | 🗸 |
| Week | Lectures | Topic |
|---|---|---|
| 1 | 1-3 | Semiconductors in equilibrium: Energy bands, intrinsic and extrinsic semiconductors, Fermi levels |
| 2 | 4-6 | Semiconductors in equilibrium: Electron and hole concentrations, temperature dependence of carrier concentrations and invariance of Fermi level. |
| 3 | 7-9 | Carrier transport processes and excess carriers: Drift and diffusion, generation and recombination of excess carriers, built-in-field, recombination-generation SRH formula |
| 4 | 10-12 | Carrier transport processes and excess carriers: Surface recombination, Einstein relations, continuity and diffusion equations for holes and electrons and quasi-Fermi level. |
| 5 | 13-15 | p-n junction: Basic structure, equilibrium conditions, contact potential, equilibrium Fermi level, space charge, non-equilibrium condition, forward and reverse bias |
| 6 | 16-18 | p-n junction: Carrier injection, minority and majority carrier currents, transient and AC conditions, time variation of stored charge, reverse recovery transient and capacitance. |
| 7 | 19-21 | Bipolar Junction Transistor: Basic principle of pnp and npn transistors, emitter efficiency, base transport factor and current gain, diffusion equation in the base, terminal currents, |
| 8 | 20-24 | Bipolar Junction Transistor: Coupled-diode model and charge control analysis, Ebers-Moll model and circuit synthesis. BJT non-ideal effects; Hetero-junction transistors. |
| 9 | 25-27 | Metal-semiconductor junction: Energy band diagram of metal semiconductor junctions, rectifying and ohmic contacts. |
| 10 | 28-30 | MOS structure: MOS capacitor, energy band diagrams and flat band voltage, threshold voltage and control of threshold voltage |
| 11 | 31-33 | MOS structure: Static CV characteristics, qualitative theory of MOSFET operation, body effect and current-voltage relationship of a MOSFET. |
| 12 | 34-36 | MOS structure: Non-ideal characteristics of MOSFET: channel-length modulation and shortchannel effects in MOSFETs. MOS scaling |
| 13 | 37-39 | Introduction to Multigate FET architecture: Double gate MOSFET, FinFET, Surrounding gate FET, high-K dielectric FETs. |
Class participation will be judged by in-class evaluation; attendance will be recorded in every class.
Continuous assessment will be done in the form of quizzes, assignments, in-class evaluations.
Final Examination: A comprehensive term final examination will be held at the end of the Term following the guideline of academic Council.
Class Participation 10%
Continuous Assessment 20%
Final Examination 70%
Total 100%
Semiconductor Physics and Devices: Basic Principles by Donald A. Neaman (4th edition)
Solid State Electronic Devices by Ben G. Streetman and Sanjay Kumar Banerjee
Semiconductor Device Fundamentals by Rober F. Pierret
Online resources or supplementary materials will be shared with the class on a need basis
Besides going through relevant topics of the textbook, it is strongly advised that the students follow the class Lectures and discussions regularly for a thorough understanding of the topics.