Course Title: Compound Semiconductor Devices
Type of Course: Optional, Theory
Offered to: EEE
Pre-requisite Course(s): None
Reviews of Compound semiconductor: Zinc-blend crystal structures, growth techniques, alloys, band gap, basic opto-electronic properties, density of carriers in intrinsic and doped compound semiconductors.
Introduction to Physics of Hetero-Junctions: Band alignment, band offset, Anderson’s rule, single and double sided hetero-junctions, quantum wells and quantization effects, lattice mismatch and strain and common hetero-structure material systems.
Hetero-Junction diode: Band banding, carrier transport and I-V characteristics.
Hetero-junction field effect transistor: Structure and principle, band structure, carrier transport and I-V characteristics. Nonideal effects, frequency response, high electron mobility transistor.
Hetero-structure bipolar transistor (HBT): Structure and operating principle, quasi-static analysis, extended Gummel-Poon model, Ebers-Moll model, secondary effects and band diagram of a graded alloy base HBT.
Resonant Tunnelling diodes: physics and operation.
Resonant Tunnelling Transistors: device physics, operation and characteristics
To deliver knowledge of the physics and properties of compound semiconductors.
To provide fundamental understanding of compound semiconductor-based heterostructure devices such as heterojunction diode, heterojunction bipolar transistor, resonant tunnelling diode and transistor.
To develop ability to analysis and design electronic devices based on compound semiconductors.
Fundamental understanding of concepts of the engineering electromagnetics and the physics of electronic materials and devices.
| CO No. | CO Statement | Corresponding PO(s)* | Domains and Taxonomy level(s)** | Delivery Method(s) and Activity(-ies) | Assessment Tool(s) |
|---|---|---|---|---|---|
| 1 | implement the physics-based knowledge to solve problems relevant to compound semiconductor materials and heterostructure devices | PO(a) | C3 | Lectures, Interaction with students | Assignment, Class test, Final exam |
| 2 | analyse the operation of heterostructure devices based on the operational principle | PO(b) | C4 | Lectures, Interaction with students | Assignment, Class test, Final exam |
| 3 | design electronic devices based on compound semiconductors | PO(c) | C6 | Lectures, Design problem solving sessions, Interactive discussions | Assignment, Class test, Final exam |
Cognitive Domain Taxonomy Levels: C1 – Knowledge, C2 – Comprehension, C3 – Application, C4 – Analysis, C5 – Synthesis, C6 – Evaluation, Affective Domain Taxonomy Levels: A1: Receive; A2: Respond; A3: Value (demonstrate); A4: Organize; A5: Characterize; Psychomotor Domain Taxonomy Levels: P1: Perception; P2: Set; P3: Guided Response; P4: Mechanism; P5: Complex Overt Response; P6: Adaptation; P7: Organization
Program Outcomes (PO): PO(a) Engineering Knowledge, PO(b) Problem Analysis, PO(c) Design/development Solution, PO(d) Investigation,
PO(e) Modern tool usage, PO(f) The Engineer and Society, PO(g) Environment and sustainability, PO(h) Ethics, PO(i) Individual work and team work,
PO(j). Communication, PO(k) Project management and finance, PO(l) Life-long Learning
* For details of program outcome (PO) statements, please see the departmental website or course curriculum
| K1 | K2 | K3 | K4 | K5 | K6 | K7 | K8 | CP1 | CP2 | CP3 | CP4 | CP5 | CP6 | CP7 | CA1 | CA2 | CA3 | CA4 | CA5 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| √ | √ | √ | √ | √ | √ | √ | √ | √ |
| Week | Lectures | Topic |
|---|---|---|
| 1 | 1-3 | Reviews of Compound semiconductor: Zinc-blend crystal structures, growth techniques, alloys, band gap |
| 2 | 4-6 | Reviews of Compound semiconductor: Basic opto-electronic properties, density of carriers in intrinsic and doped compound semiconductors |
| 3 | 7-9 | Introduction to Physics of Hetero-Junctions: Band alignment, band offset, Anderson’s rule, single and double sided hetero-junctions, quantum wells and quantization effects |
| 4 | 10-12 | Introduction to Physics of Hetero-Junctions: Lattice mismatch and strain and common hetero-structure material systems |
| 5 | 13-15 | Hetero-Junction diode: Band banding, carrier transport and I-V characteristics |
| 6 | 16-18 | Hetero-junction field effect transistor: Structure and principle, band structure, carrier transport and I-V characteristics |
| 7 | 19-21 | Hetero-junction field effect transistor: Nonideal effects, frequency response, high electron mobility transistor |
| 8 | 20-24 | Hetero-structure bipolar transistor (HBT): Structure and operating principle |
| 9 | 25-27 | Hetero-structure bipolar transistor (HBT): Quasi-static analysis, extended Gummel-Poon model, Ebers-Moll model |
| 10 | 28-30 | Hetero-structure bipolar transistor (HBT): Secondary effects and band diagram of a graded alloy base HBT |
| 11 | 31-33 | Resonant Tunnelling diodes: physics and operation |
| 12 | 34-36 | Resonant Tunnelling Transistors: device physics, operation and characteristics |
Class participation will be judged by in-class evaluation; attendance will be recorded in every class.
Continuous assessment will be done in the form of quizzes, assignments, in-class evaluations.
Final Examination: A comprehensive term final examination will be held at the end of the Term following the guideline of academic Council.
Class Participation 10%
Continuous Assessment 20%
Final Examination 70%
Total 100%
Principles of Electronic Materials and Devices by Safa Kasap (3rd edition)
Semiconductor Optoelectronic Devices by Pallab Bhattacharya (2nd edition)
Semiconductor Device Physics and Design by Umesh K. Mishra and Jasprit Singh
Physics of Semiconductor Devices by Michael Shur
Besides going through relevant topics of the textbook, it is strongly advised that the students follow the class Lectures and discussions regularly for a thorough understanding of the topics.