EEE 201 - Electronic Circuits I

EEE 201 - Electronic Circuits I

Section A: General Information

  • Course Title: Electronic Circuits I

  • Type of Course: Compulsory, Theory

Offered Of EEE

Pre-requisite Course None

Section B: Course Details

Course Content (As approved by the Academic Council)

Semiconductor diodes: Semiconductor material and properties, pn junction diode, DC analysis and models, AC equivalent circuits, other diode types, single phase rectification and regulators, Zener diode circuits, clipper and clamper circuits, multiple diode circuits, photo diodes and LED circuits, DC power supply.

MOS transistors: Structure of MOSFET, Current-Voltage Characteristics, MOS Device Models, DC circuit analysis, basic MOSFET applications, Biasing, constant current biasing, multistage MOSFET circuits, Junction Field effect transistor (JFET). MOSFET amplifier: Basic transistor amplifier configurations−Common-Source, Common-Gate Stage, Source Follower (common drain); single stage integrated circuit MOSFET amplifiers, multistage amplifiers, basic JFET amplifiers.

Bipolar Junction Transistor (BJT): BJT, DC analysis of BJT circuits, basic transistor applications, biasing, multistage circuits, BJT linear amplifiers-basic configurations, CE amplifiers, AC load lines, CC and CB amplifier, multistage amplifiers, power consideration.

Frequency Response: Amplifier frequency response, system transfer function, frequency response: transistor amplifiers with circuit capacitors, frequency response-BJT, frequency response-FET, high frequency response of transistor circuits.

Output stages and power amplifiers: Power amplifiers, power transistors, classes of amplifiers, Class-A power amplifier, Class-AB push pull complimentary output stage.

Course Objectives

  • To provide a clear understanding of the operation and applications of p-n junction diodes, FETs and BJTs which are indispensable for electrical and electronic engineering

  • To develop analytical skills for electronic devices and circuits in order to calculate it’s performance parameters for practical usage.

  • To give students the necessary background of electronics for the design and analysis of electronic circuits and systems in low and high frequency domains.

Knowledge required

Fundamental understanding of concepts of Semiconductors and Electrical Circuits I course

Course Outcomes

CO No. CO Statement Corresponding PO(s)* Domains and Taxonomy level(s)** Delivery Method(s) and Activity(-ies) Assessment Tool(s)
1 understand the formation, properties and characteristics of pn junction diode and explain diode applications in rectifiers, clampers and clippers. Moreover, Zener diode circuits (voltage regulators), photo diodes and LED circuits are analyzed. PO(b) C1, C2, C3 Lectures, Tutorials, Homeworks Assignment, Class test, Final exam
2 explain the operation of MOSFETs including it’s characteristics and able to solve problems associated with DC circuits & small-signal analyses of various MOS amplifiers. PO(b) C2, C3, C4 Lectures, Tutorials, Homeworks Assignment, Class test, Final exam
3 describe the principle of operation of BJTs and analyze it’s characteristics. Biasing techniques are fully described for BJT amplifiers and switches. Large- and small- signal models are analyzed to calculate the parameters of various BJT circuits and amplifiers. PO(b) C2, C3, C4 Lectures, Tutorials, Homeworks Assignment, Class test, Final exam
4 describe and analyze the BJT and FET amplifier frequency responses at low, intermediate and high frequencies PO(a) C2, C3 Lectures, Tutorials, Homeworks Assignment, Class test, Final exam
5 describe the classifications of power amplifiers based on biasing and analyze the circuits PO(b) C2, C4 Lectures, Tutorials, Homeworks Assignment, Class test, Final exam

* Cognitive Domain Taxonomy Levels: C1 – Knowledge, C2 – Comprehension, C3 – Application, C4 – Analysis, C5 – Synthesis, C6 – Evaluation, Affective Domain Taxonomy Levels: A1: Receive; A2: Respond; A3: Value (demonstrate); A4: Organize; A5: Characterize; Psychomotor Domain Taxonomy Levels: P1: Perception; P2: Set; P3: Guided Response; P4: Mechanism; P5: Complex Overt Response; P6: Adaptation; P7: Organization

Program Outcomes (PO): PO(a) Engineering Knowledge, PO(b) Problem Analysis, PO(c) Design/development Solution, PO(d) Investigation,
PO(e) Modern tool usage, PO(f) The Engineer and Society, PO(g) Environment and sustainability, PO(h) Ethics, PO(i) Individual work and team work,
PO(j). Communication, PO(k) Project management and finance, PO(l) Life-long Learning

* For details of program outcome (PO) statements, please see the departmental website or course curriculum

Mapping of Knowledge Profile, Complex Engineering Problem Solving and Complex Engineering Activities

K1 K2 K3 K4 K5 K6 K7 K8 P1 P2 P3 P4 P5 P6 P7 A1 A2 A3 A4 A5
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Lecture Plan

Week Lectures Topic
1 1-3 Semiconductor diodes: Semiconductor material and properties, pn junction diode, DC analysis and models, AC equivalent circuits
2 4-6 Semiconductor diodes: Other diode types, single phase rectification and regulators, Zener diode circuits
3 7-9 Semiconductor diodes: Clipper and clamper circuits, multiple diode circuits, photo diodes and LED circuits, DC power supply
4 10-12 MOS transistors: Structure of MOSFET, Current-Voltage Characteristics, MOS Device Models, DC circuit analysis
5 13-15 MOS transistors: Basic MOSFET applications, Biasing, constant current biasing, multistage MOSFET circuits, Junction Field effect transistor (JFET)
6 16-18 MOS transistors: Basic MOSFET transistor amplifier configurations−Common-Source, Common-Gate Stage, Source Follower (common drain)
7 19-21 MOS transistors: Single stage integrated circuit, MOSFET amplifiers, multistage amplifiers, basic JFET amplifiers
8 22-24 Bipolar Junction Transistor (BJT): Structure and operation of BJT, DC analysis of BJT circuits
9 25-27 Bipolar Junction Transistor (BJT): Basic transistor applications, biasing, circuits for BJT amplifiers,
10 28-30 Bipolar Junction Transistor (BJT): DC and AC load lines, BJT linear amplifiers- CE amplifiers
11 31-33 Bipolar Junction Transistor (BJT): BJT linear amplifiers- CC and CB amplifiers, multistage amplifiers, power consideration
12 34-36 Frequency Response: Amplifier frequency response, system transfer function, transistor amplifiers with circuit capacitors, frequency response-BJT, Frequency response-FET, high frequency response of transistor circuits
13 37-39 Output stages and power amplifiers: Power amplifiers, power transistors, classes of amplifiers, Class-A power amplifier, Class-AB push pull complimentary output stage

Assessment Strategy

  • Class participation will be judged by in-class evaluation; attendance will be recorded in every class.

  • Continuous assessment will be done in the form of quizzes, assignments, in-class evaluations.

  • Final Examination: A comprehensive term final examination will be held at the end of the Term following the guideline of academic Council.

Distribution of Marks

  • Class Participation 10%

Homework, Assignment and Quizes 20%

  • Final Examination 70%

  • Total 100%

Textbook/ References

  1. Microelectronic Circuits by A. S. Sedra and K. C. Smith, Oxford University Press (6th edition)

    Electronic Devices and Circuit Theory by R. L. Boylestad and L. Nashelsky, Prentice Hall of India

    Electronic Devices and Circuits by David A. Bell, Prentice Hall of India

    Online resources or supplementary materials will be shared with the class on a need basis

Besides going through relevant topics of the textbook, it is strongly advised that the students follow the class Lectures and discussions regularly for a thorough understanding of the topics.

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