EEE 461 - Semiconductor and Nano Device

EEE 461 - Semiconductor and Nano Device

Section A: General Information

  • Course Title: Semiconductor and Nano Device

  • Type of Course: Optional, Theory

  • Offered to: EEE

  • Pre-requisite Course(s): None

Section B: Course Details

Course Content (As approved by the Academic Council)

Lattice vibration: Simple harmonic model, dispersion relation, acoustic and optical phonons.

Free electron model: Electrical conductivity.

Band structure: Isotropic and anisotropic crystals, band diagrams and effective masses of different semiconductors and alloys.

Scattering theory: Perturbation theory, Fermi-Golden rule for static and oscillating potentials, scattering rates for impurity and phonons, inter-band and inter-sub-band optical absorption, mobility.

Quantum mechanical model of carrier transport: Tunneling transport, current and conductance, resonant tunneling, resonant tunneling diodes, super-lattices and mini-bands.

Introduction to inter subband transition devices.

Course Objectives

To provide a physics-based understanding of the electrical behavior of semiconductor and nano devices.

To establish the theoretical foundation required for calculating charge carrier transport through semiconductor and nano-scale devices.

The course gives a foundation for further studies in nano devices and related research.

Knowledge required

Fundamental understanding of concepts of semiconductor physics as taught in EEE 307.

Course Outcomes

CO No. CO Statement Corresponding PO(s)* Domains and Taxonomy level(s)** Delivery Method(s) and Activity(-ies) Assessment Tool(s)
1 apply the physics-based knowledge to solve problems relevant to the electrical properties of materials PO(a) C3 Lectures, Discussions Assignment, Class test, Final exam
2 analyse the charge carrier transport through semiconductor and nano devices based on the underlying physics PO(b) C4 Lectures, Discussions

Assignment,

Class test, Final exam

3 design electronic and opto-electronic devices such that specified performance characteristics are attained PO(c) C6 Lectures, Discussions

Assignment,

Final exam

Cognitive Domain Taxonomy Levels: C1 – Knowledge, C2 – Comprehension, C3 – Application, C4 – Analysis, C5 – Synthesis, C6 – Evaluation, Affective Domain Taxonomy Levels: A1: Receive; A2: Respond; A3: Value (demonstrate); A4: Organize; A5: Characterize; Psychomotor Domain Taxonomy Levels: P1: Perception; P2: Set; P3: Guided Response; P4: Mechanism; P5: Complex Overt Response; P6: Adaptation; P7: Organization

Program Outcomes (PO): PO(a) Engineering Knowledge, PO(b) Problem Analysis, PO(c) Design/development Solution, PO(d) Investigation,
PO(e) Modern tool usage, PO(f) The Engineer and Society, PO(g) Environment and sustainability, PO(h) Ethics, PO(i) Individual work and team work,
PO(j). Communication, PO(k) Project management and finance, PO(l) Life-long Learning

* For details of program outcome (PO) statements, please see the departmental website or course curriculum

Mapping of Knowledge Profile, Complex Engineering Problem Solving and Complex Engineering Activities

K1 K2 K3 K4 K5 K6 K7 K8 P1 P2 P3 P4 P5 P6 P7 A1 A2 A3 A4 A5

Lecture Plan

Week Lectures Topic
1 1-3 Lattice vibration: Simple harmonic model
2 4-6 Lattice vibration: Dispersion relations
3 7-9 Lattice vibration: Acoustic and optical phonons
4 10-12 Free electron model: Electrical conductivity
5 13-15 Band structure: Isotropic and anisotropic crystals, band diagrams
6 16-18 Band structure: Effective masses of different semiconductors and alloys
7 19-21 Band structure: Effective masses of different semiconductors and alloys
8 22-24 Scattering theory: Perturbation theory, Fermi-Golden rule for static and oscillating potentials
9 25-27 Scattering theory: Scattering rates for impurity and phonons.
10 28-30 Scattering theory: Inter-band and inter-sub-band optical absorption, mobility.
11 31-33 Quantum mechanical model of carrier transport: Tunneling transport, current and conductance.
12 34-36 Quantum mechanical model of carrier transport: Resonant tunneling diodes, super-lattices and mini-bands.
13 37-39 Introduction to inter subband transition devices

Assessment Strategy

Class Participation: Class participation and attendance will be recorded in every class.

Continuous Assessment: Continuous assessment any of the activities such as quizzes, assignment, presentation, etc. The scheme of the continuous assessment for the course will be declared on the first day of classes.

Final Examination: A comprehensive term final examination will be held at the end of the Term following the guideline of academic Council.

Distribution of Marks

  • Class Participation 10%

  • Continuous Assessment 20%

  • Final Examination 70%

  • Total 100%

Textbook/References

Solid State Physics: For Engineering and Materials Science” by John P. McKelvey

“Introduction to Solid State Physics” by Charles Kittel

“The Physics of Low-Dimensional Semiconductors” by John H. Davies

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