Course Title: Processing and Fabrication Technology
Type of Course: Optional, Theory
Offered to: EEE
Pre-requisite Course(s): None
Substrate materials: Crystal growth and wafer preparation, epitaxial growth technique, molecular
beam epitaxy, chemical vapor phase epitaxy and chemical vapor deposition (CVD). Doping techniques: Diffusion and ion implantation. Growth and deposition of dielectric layers: Thermal oxidation, CVD, plasma CVD, sputtering and silicon-nitride growth. Introduction to Semiconductor Characterization Tools. Etching: Wet chemical etching, silicon and GaAs etching, anisotropic etching, selective etching, dry physical etching, ion beam etching, sputtering etching and reactive ion etching. Cleaning: Surface cleaning, organic cleaning and RCA cleaning. Lithography: Photo-reactive materials, pattern generation, pattern transfer and metalization. Steps of lithography. Non-optical lithography. Discrete device fabrication: Diode, transistor, resistor and capacitor. Integrated circuit fabrication: Isolation - pn junction isolation, mesa isolation and oxide isolation. BJT based microcircuits, p-channel and n-channel MOSFETs, complimentary MOSFETs and silicon on insulator devices. Testing, bonding and packaging.
To familiarize the microelectronic fabrication processes and techniques to students.
To explain the working principles and models of individual fabrication processes.
To understand conventional lithographic processes and its limitations.
Fundamental understanding of electronic devices and concepts of semiconducting materials.
| CO No. | CO Statement | Corresponding PO(s)* | Domains and Taxonomy level(s)** | Delivery Method(s) and Activity(-ies) | Assessment Tool(s) |
|---|---|---|---|---|---|
| 1 | explain the unit processes of microelectronic fabrication, thin-film growth, sputtering and conventional lithographic techniques. | PO(a), PO(e) | C2, C5 | Lectures, Discussions | Assignment, Class test, Final exam |
| 2 | analyse unit process models, tools, and devices by applying concepts of micro and nano fabrication. | PO(a), PO(d) | C3, C4 | Lectures, Discussions | Assignment, Class test, Final exam |
Cognitive Domain Taxonomy Levels: C1 – Knowledge, C2 – Comprehension, C3 – Application, C4 – Analysis, C5 – Synthesis, C6 – Evaluation, Affective Domain Taxonomy Levels: A1: Receive; A2: Respond; A3: Value (demonstrate); A4: Organize; A5: Characterize; Psychomotor Domain Taxonomy Levels: P1: Perception; P2: Set; P3: Guided Response; P4: Mechanism; P5: Complex Overt Response; P6: Adaptation; P7: Organization
Program Outcomes (PO): PO(a) Engineering Knowledge, PO(b) Problem Analysis, PO(c) Design/development Solution, PO(d) Investigation,
PO(e) Modern tool usage, PO(f) The Engineer and Society, PO(g) Environment and sustainability, PO(h) Ethics, PO(i) Individual work and team work,
PO(j). Communication, PO(k) Project management and finance, PO(l) Life-long Learning
* For details of program outcome (PO) statements, please see the departmental website or course curriculum
Analysis, C5 – Evaluation, C6 – Synthesis/Design
| K1 | K2 | K3 | K4 | K5 | K6 | K7 | K8 | P1 | P2 | P3 | P4 | P5 | P6 | P7 | A1 | A2 | A3 | A4 | A5 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Week | Lectures | Topic |
|---|---|---|
| 1 | 3 |
|
| 2-5 | 4-18 | Unit Processes: Diffusion, Oxidation, Annealing, ion implantation, etching. |
| 6-7 | 19-24 | Methods of growth and sputtering: physical vapor deposition, chemical vapor deposition, MBE. |
| 8-10 | 25-30 | Conventional Lithography: 10-step process. Hard and soft bake, photoresist, alignment and exposure, develop. |
| 11 | 31-33 | Non-conventional techniques. |
| 12-13 | 34-39 | Cleanroom, bonding and packaging techniques, sources of contamination. |
| 14 | 40-42 | CMOS Technology |
Class participation will be judged by in-class evaluation; attendance will be recorded in every class.
Continuous assessment will be done in the form of quizzes, assignments, in-class evaluations.
Final Examination: A comprehensive term final examination will be held at the end of the Term following the guideline of academic Council.
Class Participation 10%
Continuous Assessment 20%
Final Examination 70%
Total 100%
Fundamentals of Microfabrication: The Science of Miniaturization by Marc J. Madou, 2nd Ed.
Introduction to Microelectronic Fabrication by Richard C. Jaeger.
Semiconductor Devices: Physics and Technology, by S. M. Sze and M. K. Lee, 3rd ed. 2012.
Online resources or supplementary reading materials will be shared with the class and MS Teams.
Besides going through relevant topics of the textbooks, it is strongly advised that the students follow the class Lectures and discussions regularly for a thorough understanding of the topics.