Dr. Mahbub Alam

Dr. Mahbub Alam

Professor
Coordinator of BRTC
Contact Information
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Major Area

Electronics and Photonics (EP)

Research Interests
  • Nanoelectronics devices NanoFETs
  • 2D Materials-Quantum Materials-Topological Properties of Materials
  • Quantum Transport-NEGF
  • Electron Photon Interaction
  • Wireless Charging of Electrical Vehicles
Dr. Mahbub Alam
Section-A: BAETE Instructed Information
Education Qualification
  • Ph.D., School of Electrical and Computer Engineering, Georgia Institute of Technology, Georgia, USA, 2016
  • M.Sc. Engg (EEE), Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh, 2006
  • B.Sc. Engg (EEE), Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh, 1999
Academic experience
  • Professor, Department of EEE, BUET, 08/2022 to Present
  • Associate Professor, Department of EEE, BUET, 10/2017- 08/2022
  • Assistant Professor, Department of EEE, BUET, 04/2006-10/2017
  • Lecturer, Department of EEE, BUET, 11/1999 – 04/2006
Non-academic experience
Fellowship/membership of academic bodies and professional organizations
  • Member, IEEE
Honors and awards
  • Colonel Oscar P. Cleaver Award, Outstanding graduate student, School of ECE, Spring 2011, Georgia Institute of Technology
List of significant publications and presentations in the five most recent years

Journal

  • Mahfuzur Rahman Munna, Md. Niloy Khan, and Mahbub Alam, ‘Effect of Staggered Sublattice Potential on Electronic and Transport Properties of Bi(111) Pristine and Hydrogen-Passivated Nanoribbons’, Physica Scripta, 2024
  • Habibullah Khan, Md. Monirul Islam, Rajnin Imran Roya, Sariha Noor Azad and Mahbub Alam, ‘Performance Analysis of an α-Graphyne Nano-Field Effect Transistor’, Micromachines 2023, 14(7), 1385; https://doi.org/10.3390/mi14071385, 2023
  • Tanvir Ahmed Masum, Beig Rajibul Hasan, Nishat Mahzabin Helaly, Anowarul Azim, Mahbub Alam, ‘Transport of Edge States in 2D Hexagonal Lattice Metallic and Topological Insulator Nanoribbons’, Journal of Computational Electronics, 2021
  • Md. Istiaque Rahaman, Mahbub Alam, ‘Elastic Phonon Dephasing Effect on spin transport in 2D Hexagonal Lattice Topological Insulator’, Superlattice and Microstructures, 2021
  • Tanvir Hossain, Md Istiaque Rahaman, Mahbub Alam, “Antidote induced armchair graphene nanoribbon based resonant tunneling diodes”, Semiconductor Science and Technology, 17/05/2021
  • Xin Li, Matthew B. Jordan, Taha Ayari, Suresh Sundaram, Youssef El Gmili, Saiful Alam, Muhbub Alam, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini & Abdallah Ougazzaden, Flexible metal-semiconductor metal device prototype on wafer scale thick boron nitride layers grown by MOVPE, Scientific Reports 7, Article number: 786 (2017), doi:10.1038/s41598-017-00865-7
  • M. Alam and P. L. Voss, Graphene quantum interference photodetector, Beilstein Journal of Nanotechnology, vol. 6, pp. 726–735, 2015, doi:10.3762/bjnano.6.74

Conference

  • Dhiman Roy, Mahbub Alam, ‘An ultra-low energy efficient topological field-effect transistor based on stanene under perpendicular electric field induced topological phase transition’ 2022 12th International Conference on Electrical and Computer Engineering (ICECE), DOI: 10.1109/ICECE57408.2022.10088910
  • Rudra Biswas, Mahbub Alam, ‘Modeling Nanoscale Depletion Mode MESFET and Comparative Study for Different Semiconductor Materials’, 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO), 28-29 April, 2022, Kottayam, India DOI:10.1109/5NANO53044.2022.9828969
  • Ashique E Elahi Sadi; Mahfuzur Rahman Munna; Mahbub Alam, ‘Effect of Single Vacancy Defect on ION/IOFF and Subthreshold Swing in Electrostatically Doped Armchair Graphene Nanoribbon Field-effect Transistor with Different Widths’, 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO), 28-29 April, 2022, Kottayam, India DOI: 10.1109/5NANO53044.2022.9828946
  • J. Sharma, N. M. Helaly, M. Alam, ‘Quantum transport of electrons in Molybdenum di-selenide nanoribbon’, 11th International Conference on electrical and computer Engineering (ICECE), 2020, Dhaka, Bangladesh
  • Nazmul Amin, Mahbub Alam, ‘Quantum Transport of Edge States in Zigzag Graphene Nanoribbon in the Presence of an Abrupt Structure Change Due to Missing Atoms’, 2020 IEEE Region 10 Conference (TENCON), 16 - 19 November, 2020, Osaka, Japan
  • Md. Istiaque Rahaman, Mahbub Alam, ‘Robust and Extraordinary Electron Transport in 2D Hexagonal Lattice Topological Insulator in the presence of random potential barrier’ 2020 IEEE Region 10 Symposium (TENSYMP), 1265-1268
  • A Azim, B R Hasan, N M Helaly, T Ahmed, M Alam, ‘Spin Transport Of Dirac Electrons In Hexagonal Lattice Topological Insulator In The Presence Of Edge Imperfections’, 2020 IEEE Region10Symposium(TENSYMP),1824-1827
  • B R Hasan, T A Masum, N M Helaly, A Azim, J Sharma, M Alam, ‘Backscattering Prohibited Transport of Photo Excited Electrons in 2D Hexagonal Lattice Topological Insulator’ 2019 IEEE International Conference on Telecommunications and Photonics (ICTP 2019)
  • Nazmul Amin, Mushita Masnd Munia, Abu Mohammad Saffat-Ee Haque, Mahbub Alam, ‘Phonon-Dephasing in Armchair Graphene Nanoribbon’, 10th International Conference on electrical and computer Engineering (ICECE 2018), Dhaka, Bangladesh
  • Shaid Hasan, Nashmin Alam, Nazmul Amin, Mahbub Alam, ‘Elastic Phonon Dephasing in Zigzag Graphene Nanoribbon, 10th International Conference on electrical and computer Engineering (ICECE 2018), Dhaka, Bangladesh Others
List of Professional Consultancy and Sponsored Research activities in the five most recent years

Consultancy

Sponsored Research Projects

Section-B Additional Information
Short Biography

Prof. Dr. Mahbub Alam is a distinguished academic with a robust career spanning several decades in the field of Electrical and Electronic Engineering (EEE). He currently serves as a Professor at the Department of Electrical and Electronic Engineering (EEE), Bangladesh University of Engineering and Technology (BUET). Dr. Alam’s academic journey began with a B.Sc. in EEE from BUET in 1999, followed by an M.Sc. in EEE from BUET in 1999. He later earned his Ph.D. from the School of Electrical and Computer Engineering, Georgia Institute of Technology, Georgia, USA in 2016. His research interests are Nanoelectronics devices, NanoFETs, 2D Materials, Quantum Materials, Topological Properties of Materials, Quantum Transport, NEGF, Electron Photon Interaction and Wireless Charging of Electrical Vehicles. His research contributions are significant, with several publications and presentations in top-tier journals and conferences. Dr. Alam’s expertise also extends to professional consultancy, including his role in the electrical design of big apartment buildings, universities, university halls and ports. He also has extensive experience in the testing of all kinds of electrical and electronic components and equipments like cables, transformers, lights, fans, substation equipments, motors, solar panels, etc. He is the winner of Colonel Oscar P. Cleaver Award for outstanding graduate student in the School of ECE in Spring 2011 at Georgia Institute of Technology

Web Links:
Major Courses Offered:

Undergraduate

  • EEE 209 – Engineering Electromagnetics
  • EEE 307 – Electrical Properties of Materials
  • EEE 207 – Electronic Circuits 2
  • EEE 455 – Compound Semiconductor Devices

Postgraduate

  • EEE 6512- Nanoscale Device Modeling and Simulation Techniques
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