Dr. Nadim Chowdhury gives invited talk in Center for Integrated Research of Future Electronics (CIRFE), Nagoya University, Japan. Title of his talk is "GaN ComplEtronics Technology : Part-1" on 21st July 2022
Gallium Nitride (GaN), a wide band-gap semiconductor, has some remarkable attributes like spontaneous and piezoelectricpolarization charge, high electron-mobility, and high saturation-velocity which are useful for electronics. These propertiesenable n-channel GaN-based transistors to operate at a higher switching speed, and at a higher power density than itsSilicon counterpart. To realize the full potential of GaN, the need for complementary electronics (Completronics) cannot beoveremphasized. A high performance GaN-Completronics technology could potentially find applications in data centers,electric vehicles, space electronics, on-chip power converters, beyond 5G base stations, and a plethora of other applicationswhere Silicon falls short in terms of performance and efficiency. However, a major hold-up towards realizing such a technologyis the lack of high-performance GaN p-channel transistors that can be monolithically integrated with GaNn-channel devices.The talk will demonstrate clear pathways of improving performance metrices of GaNp-FET through epilayer design, adoptingnovel device architecture, and process technology development.
Nadim Chowdhury is an assistant professor with the department of Electrical and Electronic Engineering (EEE), BangladeshUniversity of Engineering and Technology (BUET). He received his PhD in Electrical Engineering and Computer Science fromMassachusetts Institute of Technology (MIT), Cambridge, MA, USA in March 2022. Prior to that, he received Master ofScience in Electrical Engineering and Computer Science from the same in September 2018. He received his B.Sc. and M.Sc.degrees in Electrical and Electronic Engineering from Bangladesh University of Engineering and Technology (BUET), Dhaka,Bangladesh in 2012 and 2014, respectively. While a graduate student, he worked as a semiconductor device consultant forMitsubishi Electric Research Laboratories (MERL) and Cambridge Electronics Inc (now Finwave Semiconductor). He alsoworked as a summer intern for MERL in 2017 and in 2019. His research interest lies at the intersection of design, simulation,fabrication, and characterization of wide band gap semiconductor devices for RF, power electronics, and digital applications.Dr. Chowdhury is a recipient of the Prime Minister of Bangladesh Gold Medal in 2012, the Jacob’s Presidential fellowship atMIT in 2015, the Chancellor’s Gold Medal at BUET in 2018, the IEEE George Smith Award in 2019, MIT-MTL DoctoralDissertation Seminar award (best PhD thesis award) in May 2022. He has authored over 30 journals and conferenceproceedings and holds 11 granted U.S. patents and 5 pending U.S. patent applications.