Md. Irfan Khan completed
his B.Sc. degree from department
of Electrical and Electronic Engineering (EEE), Bangladesh
University of Engineering and Technology (BUET). He is
currently persuing his M.Sc. and working as a lecturer in the
same department. He is affiliated with the Nanodevice
Research Group. His research interest includes modeling and
simulation based analysis of novel nano-scale device.
Modeling and simulation based analysis of novel nano-scale devices
1. I. K. M. R. Rahman, M. I. Khan and Q. D. M. Khosru,
"A Rigorous Investigation of Electrostatic and Transport Phenomena of GaN
Double-Channel HEMT," in IEEE Transactions on Electron Devices, vol. 66,
no. 7, pp. 2923-2931, July 2019.
2. I. K. M. R. Rahman, M. I. Khan, M. Mahdia and Q. D. M. Khosru, "Analytical Modeling of Electrostatic Characteristics of Enhancement Mode GaN Double Channel HEMT," 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), Portland, OR, 2018, pp. 1-4.