I.K.M. Reaz Rahman completed his B.Sc degree
from Bangladesh University of Engineering and Technology (BUET) in 2017. He is
currently working as a lecturer in the department of Electrical and Electronic
Mr. Rahman is affliliated with the Nanodevice Research Group. His research interest lies in modeling and simulation of nanodevice and heterostructure using high mobility III-V materials.
Quantum mechanical simulation, Electrostatic and Transport of III-V FET, Analytical modeling
1. I. K. M. R. Rahman, M. I. Khan and Q. D. M.
Khosru, "A Rigorous Investigation of Electrostatic and Transport Phenomena
of GaN Double-Channel HEMT," in IEEE Transactions on Electron Devices,
vol. 66, no. 7, pp. 2923-2931, July 2019.
2. I. K. M. R. Rahman, M. I. Khan, M. Mahdia and Q. D. M. Khosru, "Analytical Modeling of Electrostatic Characteristics of Enhancement Mode GaN Double Channel HEMT," 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), Portland, OR, 2018, pp. 1-4.