Dr. Mahbub Alam

Associate Professor

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Academic Background

PhD, Georgia Institute of Technology, USA and France, 2016

MSc, BUET, Bangladesh, 2006

BSc, BUET, Bangladesh, 1999

Contact Info
  • mahbubalam@eee.buet.ac.bd

  • ECE 427

  • +88 01726 400 400

Dr Mahbub Alam attained his PhD degree from Georgia Institute of Technology in 2016. He attained his MSc and BSC degree in EEE in 2006 and 1999 respectively from BUET. He is the winner of Oscar P. Cleaver award for best graduate student in Georgiatech in Spring 2011

Keywords/ Research Interest

Quantum transport, NEGF, Electron photon interaction, Nanoelectronics, 2D materials, Topological insulatior.

Awards/Honors

1. Oscar P. Cleaver award for best graduate student in Georgiatech in Spring 2011
2. Best paper award, ICECE 2019, BUET, Dhaka.

Recent/Selected Publications

1. M. Alam and P. L. Voss, "Graphene quantum interference photodetector", Beilstein
Journal of Nanotechnology, vol. 6, pp. 726–735, 2015
2. Xin Li, Matthew B. Jordan, Taha Ayari, Suresh Sundaram, Youssef El Gmili, Saiful Alam, Muhbub Alam, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini and Abdallah Ougazzaden, "Flexible metal-semiconductormetal device prototype on waferscale thick boron nitride layers grown by MOVPE", Scientific Reports 7, Article number: 786, 2017