Dr Mahbub Alam attained his PhD degree from Georgia Institute of Technology in 2016. He attained his MSc and BSC degree in EEE in 2006 and 1999 respectively from BUET. He is the winner of Oscar P. Cleaver award for best graduate student in Georgiatech in Spring 2011
Quantum transport, NEGF, Electron photon interaction, Nanoelectronics, 2D materials, Topological insulatior.
1. Oscar P. Cleaver
award for best graduate student in Georgiatech in Spring 2011
2. Best paper award, ICECE 2019, BUET, Dhaka.
1. M. Alam and P. L.
Voss, "Graphene quantum interference photodetector", Beilstein
Journal of Nanotechnology, vol. 6, pp. 726–735, 2015
2. Xin Li, Matthew B. Jordan, Taha Ayari, Suresh Sundaram, Youssef El Gmili, Saiful Alam, Muhbub Alam, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini and Abdallah Ougazzaden, "Flexible metal-semiconductormetal device prototype on waferscale thick boron nitride layers grown by MOVPE", Scientific Reports 7, Article number: 786, 2017