Md. Shafiqul Islam received the B.Sc. and M.Sc. degrees in Electrical and Electronic Engineering (EEE) from the Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh, in 1987 and 1989, respectively. He received his Ph.D. degree in Microelectronics from Dublin City University, Republic of Ireland in 1997. In 1989, he joined BUET as a Lecturer in the Department of EEE. He is currently working as a Professor and Head in the same department. He served as an Associate Professor in the Research Institute of Electronics (RIE), Shizuoka University, Japan from 30 June 2003 to 31 March 2005. He also served as a Visiting Professor in the RIE, Shizuoka University, Japan from 01 April 2005 to 30 June 2005. He worked as a Professor and Head in the Department of EEE, Uttara University, Dhaka from 01 September 2011 to 31 Aug 2012. His current research interests are in device physics, modeling, fabrication and characterization of MESFETs and HEMTs using different III-V compound semiconductor materials such as GaAs, GaN, SiC and InP.
Device physics, modeling, fabrication and characterization of high-speed devices (MESFETs and HEMTs) using different III-V compound semiconductor materials such as GaAs, GaN, SiC and InP. Modeling of hetero-junction nano MOSFETs, FinFETs and Tunneling FETs. Modeling and characterization of photovoltaic solar cells.
1. R. Fabiha, C. N. Saha and M. S. Islam, “Analytical Modeling and Performance Analysis for Symmetric Double Gate Stack-Oxide Junctionless FET in Subthreshold Region,” Int’l J. Systems Applications, Engineering and Development, Vol.11, 2017, pp.138-142. 2.S. I. Ali, M. S. Islam, and M. R. Islam, “A comprehensive review of energy efficient content addressable memory for network applications,” Journal of Circuits, Systems and Computers, Vol. 25, No. 4, 2016 DOI: 10.1142/S0218126616300026.